Welcome to the homepage of Uwe Rossow

I am a experimental physicist presently working as a senior scientist (Akademischer Rat) at TU Braunschweig and my professional address is: Dr. Uwe Rossow TU Braunschweig Inst. f. Techn. Physik Mendelssohnstr. 2 D-38106 Braunschweig, Germany Email: u.rossow@tu-bs.de Fax: ++49-(0)531-391 8511 A short CV is here: CV.

Research:

• Important and recent publications
• Materials investigated
• Methods applied

My research area is solid state physics, semiconductors. I am mainly involved in the characterization and growth of semiconductor layers and nanostructures and the optical response of surfaces. My speciality is the optical characterization with the polarization sensitive methods spectroscopic ellipsometry (SE) and reflectance difference spectroscopy (RDS, RAS). I also worked with other classical surface spectroscopies such as photoemission (XPS) or Auger electron spectroscopy (AES).

My research is published in 6 reviews, 102 refereed articles, total 114 publications and 165 conference presentations.

Important and recent publications:

1. U. Rossow and W. Richter: Spectroscopic Ellipsometry, p. 68-128, in: Characterization of Epitaxial Semiconductor Layers by Electromagnetic Radiation, G. Bauer and W. Richter (eds.), Springer Berlin, Heidelberg 1995.
2. U. Rossow: Spectroscopic Ellipsometry, p. 39-76, in: Epioptics - Linear and Nonlinear Optical Spectroscopy of Surfaces and Interfaces, J. F. McGilp, D. Weaire, and Ch. Patterson (eds.), Springer Berlin, Heidelberg 1995.
3. U. Rossow, A. Krost, T. Werninghaus, K. Schattke, W. Richter, A. Hase, H. Künzel, H. Roehle: Ellipsometric Characterization of InP Based Quantum-Well Structures, Thin Solid Films 233, 180 (1993).
4. U. Rossow, U. Frotscher, C. Pietryga, D. E. Aspnes, W. Richter: Porous Si layers as a model system for nanostructures, Appl. Surf. Sci. 104/105, 137 (1996).
5. U. Rossow, U. Frotscher, C. Pietryga, W. Richter, D. E. Aspnes: Interpretation of the dielectric function of porous Si layers, Appl. Surf. Sci. 102, 413 (1996).
6. U. Rossow, N. Dietz, K. J. Bachmann, D. E. Aspnes: Optical investigations of surface processes in GaP heteroepitaxy on Si under pulsed chemical beam epitaxy conditions, J. Vac. Sci. Technol. B14, 3040 (1996).
7. U. Rossow, L. Mantese, D. E. Aspnes: On the origin of surface induced optical anisotropy spectra, Proc. of the ICPS-23, Vol. 2, p. 831, M. Scheffler, R. Zimmermann (eds.), World Scientific 1996.
8. U. Rossow: Depolarization/mixed polarization corrections of ellipsometry, Thin Solid Films 313/314, 98 (1998).
9. U. Rossow, L. Mantese, D. E. Aspnes: Lineshapes of surface induced optical anisotropy spectra measured by RDS/RAS, Appl. Surf. Sci. 123/124, 237 (1998).
10. U. Rossow, K. Lindner, M. Lübbe, D. E. Aspnes, D. R. T. Zahn: RDS spectra of clean (3x2), 2x1), and c(2x2) 3C-SiC(001) surfaces: New evidence for surface state contributions to optical anisotropy spectra, J. Vac. Sci. Technol. B16, 2355 (1998).
11. U. Rossow, D. E. Aspnes, O. Ambacher, V. Cimalla, N. V. Edwards, M. Bremser, R. F. Davis, J. A. Schaefer, M. Stutzmann: RDS characterization of AlGaN compound layers, Phys. stat. sol. (b)216, 215 (2000).
12. U. Rossow, D. E. Aspnes: Characterization of AlGaN-compound layers by RDS, Phys. stat. sol. (a)177, 157 (2000).
13. U. Rossow: Optical Characterization of Porous Materials, Phys. stat. sol. (a)184, 51 (2001).

complete publication list (pdf format)

Materials investigated:

• Si, porous Si, Si/SiO₂ interfaces, Ge
• Conventional III-V such as GaAs, InP, GaP, In_xGa_1-xAs, In_xAl_1-xAs, and quarternairies
• II-VI-compounds such as ZnSe, CdS
• Group-III-nitrides AlGaN on sapphire and 6H-SiC
• GaAs, InP, As monolayers, and Sb all on Si

Methods applied:

• Spectroscopic ellipsometry, RDS/RAS, Raman scattering, LLS, PRS
• LEED, AES, QMS, XPS

last modified: 1-May-2001